Academics

Home Academics Courses Undergraduate Courses

Dop Course Outline
OS2011 Optoelectronic Semiconductor Physics Last Revised: 2018-03-26
Course Objectives Develop a SOLID understanding of the areas below for basic principles of semiconductor optoelectronic devices.

1. Solid State Physics (space lattices, crystal structure)

2. Quantum Theory of Solids (energy band, density of states, statistical mechanics)

3. Semiconductor Physics (electronic properties of semiconductors, pn junction/heterojunction)

4. Optical Process in Semiconductor

Prerequisite

Textbook Textbook:

1. Donald A. Neamen, Semiconductor Physics and Devices: Basic Principles, 4th ed. (McGraw-Hill, 2011).

2. Lecture notes [available on LMS (https://lms.ncu.edu.tw) prior to the class]


References:

1. John. P. McKelvey, Solid State and Semiconductor Physics (Harper & Row, 1966)

2. B. L. Anderson and R. L. Anderson, Fundamentals of Semiconductor Devices (McGraw-Hill, 2005)

3. B. G. Streetman and S. K. Banerjee, Solid State Electronic Devices, 6th ed. (Prentice Hall, 2006)

4. Pallab Bhattacharya, Semiconductor Optoelectronic Devices, 2nd ed. (Prentice-Hall, 1996)

5. Mitsuo Fukuda, Optical Semiconductor Devices (John Wiley & Sons, 1999)

Topical Outline 1. Crystal Structures

Semiconductor Materials, Types of Solids,Space Lattices, Fundamental Types of Lattices, Index Lattices for Crystal Planes, Basic Crystal Structure

2. Introduction to Quantum Mechanics

Principles of Quantum Mechanics, Schrodinger's Wave Equation, Applications of Schrodinger's Wave Equation, Extension of Wave Theory to Atoms

3. Introduction to Quantum Theory in Solids

Allowed and Forbidden Energy Band, Extension to Three Dimensions, Electrical Conduction in Solids, Density of States Function, Fermi-Dirac Probability Distribution

4. Semiconductor in Equilibrium

Charge Carriers in Intrinsic Semiconductors, Dopant Atoms and Energy Levels,The Extrinsic Semiconductor, Statistics of Donors and Acceptors, Charge Neutrality, Position of Fermi Level

5. Carrier Transport Phenomena

Carrier Drift, Carrier Diffusion, Graded Impurity Distribution, The Hall Effect

6. Non-Equilibrium Excess Carriers in Semiconductors

Carrier Generation and Recombination, Characteristics of Excess Carriers, Ambipolar Transport, Quasi-Fermi Energy Levels

7. Optical Processes in Semiconductors

Spontaneous Emission, Absorption, Stimulated Emission

8. The pn Junction

Basic Structure, Zero Applied Bias, Reverse Applied Bias, Nonuniformly Doped Junctions




.Address: Kwoh-Ting Optics and Photonics Building, No. 300, Zhongda Rd., Zhongli District, Taoyuan City, Taiwan (R.O.C.)
.TEL: +886-3-4227151 ext. 65251.FAX: 886-3-4252897.Email:ncu5251@ncu.edu.tw
Copyright © 2005-2021 Department of Optics and Photonics, National Central University.Privacy