Academics

Home Academics Courses Undergraduate Courses

Dop Course Outline
OS2011 Optoelectronic Semiconductor Physics Last Revised: 2024-10-17
Course Objectives Develop a SOLID understanding of the areas below for basic principles of semiconductor optoelectronic devices.
1. Solid State Physics (space lattices, crystal structure)
2. Quantum Theory of Solids (energy band, density of states, statistical mechanics)
3. Semiconductor Physics (electronic properties of semiconductors, pn junction/heterojunction)
4. Optical Process in Semiconductor

Prerequisite

Textbook Primary Reference  Solid State Electronic Devices 7th edition (ISBN-13: 978-1-292-06055-2) by Ben G. Streetman & Sanjay Kumar Banerjee, Pearson Prentice Hall.  Lecturing slides (will be posted on eeClass) 密碼為: OS2011 Secondary references  Semiconductor Physics and Devices by Donald A. Neamen, McGraw-Hill, ISBN: 978-007-108902-9  Quantum Physics of atoms, molecules, solids, nuclei, and particles by Robert Eisberg and Robert Resnick, Wiley, ISBN: 0-471-87373-X  Semiconductor Optoelectronic Devices by Pallab Bhattacharya, Pearson Prentice Hall, ISBN: 0-13-628-579-1

Topical Outline 1. Crystal Structure
Semiconductor Materials, Types of Solids, Space Lattices, Fundamental Types of Lattices, Index Lattices for Crystal Planes, Basic Crystal Structures, Compound Semiconductors and Alloy Semiconductors

2. Introduction to Quantum Mechanics
Principles of Quantum Mechanics, Schrodinger‘s Wave Equation, Applications of Schrodinger‘s Wave Equation, Extension of Wave Theory to Atoms

3. Introduction to Quantum Theory in Solids
Allowed and Forbidden Energy Band, Extension to Three Dimensions, Electrical Conduction in Solids, Density of States Function, Fermi-Dirac Probability Distribution

4. Semiconductor in Equilibrium
Charge Carriers in Intrinsic Semiconductors, Dopant Atoms and Energy Levels, The Extrinsic Semiconductor, Statistics of Donors and Acceptors, Charge Neutrality, Position of Fermi Level

5. Carrier Transport Phenomena
Carrier Drift, Carrier Diffusion, Graded Impurity Distribution, The Hall Effect

6. Non-Equilibrium Excess Carriers in Semiconductors
Carrier Generation and Recombination, Characteristics of Excess Carriers, Ambipolar Transport, Quasi-Fermi Energy Levels, Excess Carrier Lifetime

7. Optical Processes in Semiconductors
Spontaneous Emission, Absorption, Stimulated Emission, Net Rates of Stimulated Emission, Spontaneous Emission, and Absorption, Radiative and Nonradiative Recombination Rates and Carrier Lifetime

8. The pn junction
Basic Structure, Zero Applied Bias, Reverse Applied Bias, Nonuniformly Doped Junctions




.Address: Kwoh-Ting Optics and Photonics Building, No. 300, Zhongda Rd., Zhongli District, Taoyuan City, Taiwan (R.O.C.)
.TEL: +886-3-4227151 ext. 65251.FAX: 886-3-4252897.Email:ncu5251@ncu.edu.tw
Copyright © 2005-2021 Department of Optics and Photonics, National Central University.Privacy