課程介紹

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課程目標

Develop a SOLID understanding of the areas below for basic principles of semiconductor optoelectronic devices.
1. Solid State Physics (space lattices, crystal structure)
2. Quantum Theory of Solids (energy band, density of states, statistical mechanics)
3. Semiconductor Physics (electronic properties of semiconductors, pn junction/heterojunction)
4. Optical Process in Semiconductor

修習條件

主要教本

Textbook:
1. Donald A. Neamen, Semiconductor Physics and Devices: Basic Principles, 4th ed. (McGraw-Hill, 2011).
2. Lecture notes [available on ee-class (https://ncueeclass.ncu.edu.tw/) prior to the class]

References:
1. John. P. McKelvey, Solid State and Semiconductor Physics (Harper & Row, 1966)
2. B. L. Anderson and R. L. Anderson, Fundamentals of Semiconductor Devices (McGraw-Hill, 2005)
3. B. G. Streetman and S. K. Banerjee, Solid State Electronic Devices, 6th ed. (Prentice Hall, 2006)
4. Pallab Bhattacharya, Semiconductor Optoelectronic Devices, 2nd ed. (Prentice-Hall, 1996)
5. Mitsuo Fukuda, Optical Semiconductor Devices (John Wiley & Sons, 1999)

內容大綱

1. Crystal Structure
Semiconductor Materials, Types of Solids, Space Lattices, Fundamental Types of Lattices, Index Lattices for Crystal Planes, Basic Crystal Structures, Compound Semiconductors and Alloy Semiconductors

2. Introduction to Quantum Mechanics
Principles of Quantum Mechanics, Schrodinger's Wave Equation, Applications of Schrodinger's Wave Equation, Extension of Wave Theory to Atoms

3. Introduction to Quantum Theory in Solids
Allowed and Forbidden Energy Band, Extension to Three Dimensions, Electrical Conduction in Solids, Density of States Function, Fermi-Dirac Probability Distribution

4. Semiconductor in Equilibrium
Charge Carriers in Intrinsic Semiconductors, Dopant Atoms and Energy Levels, The Extrinsic Semiconductor, Statistics of Donors and Acceptors, Charge Neutrality, Position of Fermi Level

5. Carrier Transport Phenomena
Carrier Drift, Carrier Diffusion, Graded Impurity Distribution, The Hall Effect

6. Non-Equilibrium Excess Carriers in Semiconductors
Carrier Generation and Recombination, Characteristics of Excess Carriers, Ambipolar Transport, Quasi-Fermi Energy Levels, Excess Carrier Lifetime

7. Optical Processes in Semiconductors
Spontaneous Emission, Absorption, Stimulated Emission, Net Rates of Stimulated Emission, Spontaneous Emission, and Absorption, Radiative and Nonradiative Recombination Rates and Carrier Lifetime

8. The pn junction
Basic Structure, Zero Applied Bias, Reverse Applied Bias, Nonuniformly Doped Junctions